Large-signal characterization of dual-gate field effect transistors using load-pull measurements

An automated injected signal load-pull measurement system has been designed to operate from 8 to 12 GHz, with a range of injected signal power extending to 4 W. The system has been shown to be as accurate as the HP8510 network analyzer. The large signal intrinsic drain-to-source resistance of an 180...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1993-02, Vol.41 (2), p.183-189
Main Authors: Drury, D.M., Zimmermann, D.C., Davis, W.A.
Format: Article
Language:English
Subjects:
Applied sciences
Electrical resistance measurement
Electronics
Exact sciences and technology
FETs
Gallium arsenide
Impedance measurement
Measurement techniques
Phase measurement
Power amplifiers
Power measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal design
Transistors
Voltage
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An automated injected signal load-pull measurement system has been designed to operate from 8 to 12 GHz, with a range of injected signal power extending to 4 W. The system has been shown to be as accurate as the HP8510 network analyzer. The large signal intrinsic drain-to-source resistance of an 1800 mu m dual-gate FET was measured on the load-pull system, and subsequently a variable power amplifier was designed using the load-pull data. The output phase variation of the variable power amplifier was 10 degrees when operating at 31.3 dBm.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.216455