Tape automated bonding inner lead bonded devices (TAB/ILB) failure analysis

Tape automated bonding inner lead bonded (TAB/ILB) devices were stressed by environmental tests and the subsequent failure analysis was performed. Two interesting failure mechanisms were observed, one is lead beam fracture after temperature cycling. It was observed to initiate at the intermetallics...

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Bibliographic Details
Published in:IEEE transactions on components, hybrids, and manufacturing technology hybrids, and manufacturing technology, 1993-05, Vol.16 (3), p.304-310
Main Authors: Tung, C.-H., Kuo, Y.-S., Chang, S.-M.
Format: Article
Language:English
Subjects:
Aluminum
Applied sciences
Bonding
Capacitive sensors
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Electrons
Exact sciences and technology
Failure analysis
Gold alloys
Packaging
Performance evaluation
Temperature
Testing
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Summary:Tape automated bonding inner lead bonded (TAB/ILB) devices were stressed by environmental tests and the subsequent failure analysis was performed. Two interesting failure mechanisms were observed, one is lead beam fracture after temperature cycling. It was observed to initiate at the intermetallics formed between Cu, lead and its tin plating layer during temperature cycling. The other mechanism is diffusion penetration of Ti-W barrier alloy by Au and Al interdiffusion. The penetration reaction includes nucleation, growth, and coalescence. Al hillocks were observed to be the nucleation sites. The result of this work can be applied in modifying bumping and inner lead bonding processes.< >
ISSN:0148-6411
1558-3082
DOI:10.1109/33.232057