In situ selective-area etching and MOVPE regrowth of GaInAs-InP on InP substrates: Selective-area epitaxy, non-planar epitaxy and integration technology

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Bibliographic Details
Published in:Semiconductor science and technology 1993, Vol.8 (6), p.994-997
Main Authors: HENLE, B, RUDELOFF, R, BOLAY, H, SCHOLZ, F
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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ISSN:0268-1242
1361-6641