The role of the arsenic source in selective epitaxial growth of GaAs and AlGaAs by MOMBE: Selective-area epitaxy, non-planar epitaxy and integration technology

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Bibliographic Details
Published in:Semiconductor science and technology 1993, Vol.8 (6), p.979-983
Main Authors: ABERNATHY, C. R, PEARTON, S. J, REN, F, WISK, P. W, LOTHIAN, J. R, BOHLING, D. A, MUHR, G. T
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0268-1242
1361-6641