A model for charge transfer in buried-channel charge-coupled devices at low temperature

Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-dimensional numerical model which describes the capture and emission of electrons from a shallow donor level in silicon through the use of the Shockley-Read-Hall generation-recombination theory. Incorporated in th...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-05, Vol.38 (5), p.1162-1174
Main Authors: Banghart, E.K., Lavine, J.P., Trabka, E.A., Nelson, E.T., Burkey, B.C.
Format: Article
Language:English
Subjects:
Applied sciences
Charge coupled devices
Charge transfer
Charge transfer devices
Electron emission
Electronics
Exact sciences and technology
Infrared detectors
Infrared imaging
Numerical models
Poisson equations
Schottky barriers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Temperature sensors
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Summary:Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-dimensional numerical model which describes the capture and emission of electrons from a shallow donor level in silicon through the use of the Shockley-Read-Hall generation-recombination theory. Incorporated in the model are the three-dimensional Poole-Frenkel barrier lowering theory of A. K. Jonscher (1967) and J. L. Hartke (1968) and the low-temperature form of Poisson's equation. Reasonable agreement of the model with experimental data taken from the buried-channel CCDs of a PtSi Schottky barrier infrared image sensor is found. Moreover, the value for the capture cross section of electrons to the shallow phosphorus level in silicon inferred from the model follows the cascade theory for capture by M. Lax (1959) and agrees roughly with determinations made by other experimenters.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.78394