A model for charge transfer in buried-channel charge-coupled devices at low temperature

• Published in: IEEE transactions on electron devices 1991-05, Vol.38 (5), p.1162-1174
• Main Authors: Banghart, E.K., Lavine, J.P., Trabka, E.A., Nelson, E.T., Burkey, B.C.
• Format: Article
• Language: English
• Subjects: Applied sciences; Charge coupled devices; Charge transfer; Charge transfer devices; Electron emission; Electronics; Exact sciences and technology; Infrared detectors; Infrared imaging; Numerical models; Poisson equations; Schottky barriers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Temperature sensors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.78394

Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-dimensional numerical model which describes the capture and emission of electrons from a shallow donor level in silicon through the use of the Shockley-Read-Hall generation-recombination theory. Incorporated in the model are the three-dimensional Poole-Frenkel barrier lowering theory of A. K. Jonscher (1967) and J. L. Hartke (1968) and the low-temperature form of Poisson's equation. Reasonable agreement of the model with experimental data taken from the buried-channel CCDs of a PtSi Schottky barrier infrared image sensor is found. Moreover, the value for the capture cross section of electrons to the shallow phosphorus level in silicon inferred from the model follows the cascade theory for capture by M. Lax (1959) and agrees roughly with determinations made by other experimenters.< >