A simple MOSFET model for circuit analysis

A simple, general, yet realistic MOSFET model, the nth power law MOSFET model, is introduced. The model can express I-V characteristics of short-channel MOSFETs at least down to 0.25- mu m channel length and of resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation tim...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-04, Vol.38 (4), p.887-894
Main Authors: Sakurai, T., Newton, A.R.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Bridge circuits
Circuit analysis
Circuit simulation
Differential equations
Electronics
Exact sciences and technology
MOSFET circuits
Parameter extraction
Power MOSFET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SPICE
Threshold voltage
Transistors
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Summary:A simple, general, yet realistic MOSFET model, the nth power law MOSFET model, is introduced. The model can express I-V characteristics of short-channel MOSFETs at least down to 0.25- mu m channel length and of resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, unlike the fitting procedure with expensive numerical iterations used for the conventional models. The model also permits analytical treatment of circuits in the short-channel region and plays the role of a bridge between complicated MOSFET current characteristics and circuit behavior in the deep-submicrometer region.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.75219