Observation of electromigration at low temperature

Electromigration and mean time-to-failure were investigated for unglassed thin Al stripes over the temperature range of 223 K to 347 K. Thermal effects are minimized by sinking heat from the linestrip through the substrate to a miniature cryogenic refrigerator. This test technique allows the investi...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on reliability 1991-12, Vol.40 (5), p.524-530
Main Authors: Rhoden, W.E., Banton, D.W., Kitchen, D.R., Maskowitz, J.V.
Format: Article
Language:English
Subjects:
Aluminum
Applied sciences
Current density
Design. Technologies. Operation analysis. Testing
Electromigration
Electronics
Exact sciences and technology
Failure analysis
Integrated circuits
Refrigeration
Reliability engineering
Scanning electron microscopy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature distribution
Testing
Thermal force
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electromigration and mean time-to-failure were investigated for unglassed thin Al stripes over the temperature range of 223 K to 347 K. Thermal effects are minimized by sinking heat from the linestrip through the substrate to a miniature cryogenic refrigerator. This test technique allows the investigation of structure and current interactions while suppressing the effects of an added temperature factor. The circuit was stressed by direct current densities greater than 4*10/sup 6/ A/cm/sup 2/. Electromigration damage was induced in a test stripe at temperatures near 0 degrees C. For the temperature range of 347 K to 267 K, an activation energy of 0.30 eV was calculated, indicating that surface migration is the dominant failure mechanism. For temperatures between 267 K and 223 K, a calculated activation energy of 0.12 eV suggests a different failure mechanism, which was subsequently identified as stripe separation from the substrate.< >
ISSN:0018-9529
1558-1721
DOI:10.1109/24.106767