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SiO2 tapered etching employing magnetron discharge of fluorocarbon gas

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Bibliographic Details
Published in:Japanese journal of applied physics 1992-02, Vol.31 (2A), p.405-410
Main Authors: OHIWA, T, HORIOKA, K, ARIKADO, T, HASEGAWA, I, OKANO, H
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.31.405