A high-speed and highly uniform submicrometer-gate BPLLD GaAs MESFET for GaAs LSI's

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Bibliographic Details
Published in:IEEE transactions on electron devices 1992, Vol.39 (4), p.757-766
Main Authors: NODA, M, HOSOGI, K, OKU, T, NISHITANI, K, OTSUBO, M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646