A high-speed and highly uniform submicrometer-gate BPLLD GaAs MESFET for GaAs LSI's

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Published in:IEEE transactions on electron devices 1992, Vol.39 (4), p.757-766
Main Authors: NODA, M, HOSOGI, K, OKU, T, NISHITANI, K, OTSUBO, M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_issue 4
container_start_page 757
container_title IEEE transactions on electron devices
container_volume 39
creator NODA, M
HOSOGI, K
OKU, T
NISHITANI, K
OTSUBO, M
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1557-9646
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source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title A high-speed and highly uniform submicrometer-gate BPLLD GaAs MESFET for GaAs LSI's
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