Impact ionization thresholds in GexSi1-x alloys and strained layers

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Bibliographic Details
Published in:Journal of applied physics 1992-04, Vol.71 (8), p.3821-3826
Main Authors: CZAJKOWSKI, I. K, ALLAM, J, ADAMS, A. R, GELL, M. A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
High-field and nonlinear effects
Physics
Online Access:Get full text
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.350897