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A new 'shift and ratio' method for MOSFET channel-length extraction

A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrome...

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Bibliographic Details
Published in:IEEE electron device letters 1992-05, Vol.13 (5), p.267-269
Main Authors: Taur, Y., Zicherman, D.S., Lombardi, D.R., Restle, P.J., Hsu, C.H., Nanafi, H.I., Wordeman, M.R., Davari, B., Shahidi, G.G.
Format: Article
Language:English
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Summary:A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrometer CMOS devices at room and low temperatures. It is also found that, for both nFET and pFET, the source-drain resistance is essentially independent of temperature from 300 to 77 K.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.145049