Direct measurement of base drift field in bipolar transistors

The authors have developed a method to measure an effective base drift field and the base transit-time reduction factor of bipolar transistors, by measuring the excess phase of the base transport factor. This technique relies on measuring small-signal characteristics of the transistor at a low frequ...

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Bibliographic Details
Published in:IEEE electron device letters 1992-05, Vol.13 (5), p.276-278
Main Authors: Yan, R.-H., Liu, T.M., Chiu, T.-Y., Archer, V.D.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Current measurement
Delay effects
Doping profiles
Electronics
Exact sciences and technology
Frequency measurement
Phase measurement
Photonic band gap
Q measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Time measurement
Transconductance
Transistors
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Summary:The authors have developed a method to measure an effective base drift field and the base transit-time reduction factor of bipolar transistors, by measuring the excess phase of the base transport factor. This technique relies on measuring small-signal characteristics of the transistor at a low frequency and following the phase of the transconductance at the frequency approaching and exceeding the unit current gain frequency (f/sub T/). With this technique, the authors verify that the effective drift inside the base of Si bipolar transistors decreases with increased base implantation energy and thermal treatment. Such directly measured drift-dependent base transport provides additional insight for optimizing processing used in bipolar technology development.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.145052