Low-Pressure Chemical Vapor Deposition of α-Si3N4 from SiF4 and NH3: Kinetic Characteristics

Deposition of α‐Si3N4 from SiF4 and NH3 was systematically studied using an axisymmetric, vertical hot‐wall reactor in the temperature range of 1340° to 1490°C. The relationship between process variables and deposition behavior was identified. The deposition process was most strongly influenced by t...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1992-08, Vol.75 (8), p.2200-2206
Main Authors: Lee, Woo Y., Strife, James R., Veltri, Richard D.
Format: Article
Language:English
Subjects:
Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Exact sciences and technology
Structural ceramics
Technical ceramics
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Summary:Deposition of α‐Si3N4 from SiF4 and NH3 was systematically studied using an axisymmetric, vertical hot‐wall reactor in the temperature range of 1340° to 1490°C. The relationship between process variables and deposition behavior was identified. The deposition process was most strongly influenced by temperature. In general, deposition rate increased exponentially with increased deposition temperature, although reagent depletion in the axial direction caused a rapid decrease in the deposition rate. The deposition rate increased moderately with increased flow rate or decreased NH3/SiF4 molar ratio. The decomposition characteristic of pure NH3 and SiF4 were studied utilizing mass spectroscopy and compared to thermodynamic predictions in order to assess their influences on the Si3N4 deposition process. Finally, the crystallography of Si3N4 deposits was correlated as a function of temperature and deposition rate.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1992.tb04484.x