Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations

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Bibliographic Details
Published in:Semiconductor science and technology 1992-03, Vol.7 (3), p.385-390
Main Authors: Torchinskaya, T V, Korsunskaya, N E, Sheinkman, M K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/7/3/019