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A combined single-phonon Raman and photoluminescence study of direct and indirect band-gap AlxGa1-xAs alloys grown by molecular-beam epitaxy
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Published in: | Journal of applied physics 1989-02, Vol.65 (4), p.1676-1682 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.342938 |