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26-percent efficient point-junction concentrator solar cells with a front metal grid

Silicon concentrator cells with point diffusion and metal contacts on both the front and backsides are discussed. The design minimizes reflection losses by forming an inverted pyramid topography on the front surface and by shaping the metal grid lines in the form of a triangular ridge. A short-circu...

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Bibliographic Details
Published in:IEEE electron device letters 1990-01, Vol.11 (1), p.6-8
Main Authors: Cuevas, A., Sinton, R.A., Midkiff, N.E., Swanson, R.M.
Format: Article
Language:English
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Summary:Silicon concentrator cells with point diffusion and metal contacts on both the front and backsides are discussed. The design minimizes reflection losses by forming an inverted pyramid topography on the front surface and by shaping the metal grid lines in the form of a triangular ridge. A short-circuit current density of 39.6 mA/cm/sup 2/ has been achieved, even though the front grid covers 16% of the cell's active area of 1.56 cm/sup 2/. This, together with an open-circuit voltage of 700 mV, has led to an efficiency of 22% at one sun, AM1.5 global spectrum. Under direct-spectrum 8.8-W/cm/sup 2/ concentrated light, the efficiency is 26%. This is the highest ever reported for a silicon cell having a front metal grid.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.46913