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Estimation of percentage relaxation in Si/Si1-xGex strained-layer superlattices

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Bibliographic Details
Published in:Semiconductor science and technology 1989-01, Vol.4 (1), p.10-15
Main Authors: Halliwell, M A G, Lyons, M H, Davey, S T, Hockly, M, Tuppen, C G, Gibbings, C J
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/4/1/002