A 23-ns 256K EPROM with double-layer metal and address transition detection

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1989-10, Vol.24 (5), p.1250-1258
Main Authors: HOFF, D, PATHAK, S, PAYNE, J, RITU SHRIVASTAVA, ARREOLA, J. I, NORRIS, C, SHOU-CHANG TSAO, PRICKETT, B. L, ORPUT, M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1989.572589