A 23-ns 256K EPROM with double-layer metal and address transition detection

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Published in:IEEE journal of solid-state circuits 1989-10, Vol.24 (5), p.1250-1258
Main Authors: HOFF, D, PATHAK, S, PAYNE, J, RITU SHRIVASTAVA, ARREOLA, J. I, NORRIS, C, SHOU-CHANG TSAO, PRICKETT, B. L, ORPUT, M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 1258
container_issue 5
container_start_page 1250
container_title IEEE journal of solid-state circuits
container_volume 24
creator HOFF, D
PATHAK, S
PAYNE, J
RITU SHRIVASTAVA
ARREOLA, J. I
NORRIS, C
SHOU-CHANG TSAO
PRICKETT, B. L
ORPUT, M
description
doi_str_mv 10.1109/JSSC.1989.572589
format article
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ispartof IEEE journal of solid-state circuits, 1989-10, Vol.24 (5), p.1250-1258
issn 0018-9200
1558-173X
language eng
recordid cdi_pascalfrancis_primary_6928223
source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title A 23-ns 256K EPROM with double-layer metal and address transition detection
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