Observation of radiative and nonradiative tunneling in GaAs/AlxGa1-xAs heterojunction bipolar transistors with compositionally graded base-emitter heterojunctions

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Published in:Journal of applied physics 1989-04, Vol.65 (8), p.3282-3284
Main Authors: DE LYON, T. J, CASEY, H. C. JR, ENQUIST, P. M, HUTCHBY, J. A, SPRINGTHORPE, A. J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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container_end_page 3284
container_issue 8
container_start_page 3282
container_title Journal of applied physics
container_volume 65
creator DE LYON, T. J
CASEY, H. C. JR
ENQUIST, P. M
HUTCHBY, J. A
SPRINGTHORPE, A. J
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doi_str_mv 10.1063/1.342687
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ispartof Journal of applied physics, 1989-04, Vol.65 (8), p.3282-3284
issn 0021-8979
1089-7550
language eng
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source AIP Digital Archive
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
title Observation of radiative and nonradiative tunneling in GaAs/AlxGa1-xAs heterojunction bipolar transistors with compositionally graded base-emitter heterojunctions
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