Simulation of microcrack effects in dissolution of positive resist exposed by X-ray lithography

Etchant percolation through voids plays an important role in dissolution of radiation sensitive materials in IC manufacture, but analysis and simulation of this phenomenon are hampered by the complexity of carrying out simulations at up to 20000 voids etching simultaneously. An attempt is made to us...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 1988-07, Vol.7 (7), p.755-764
Main Authors: Guerrieri, R., Neureuther, A.R.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Biological materials
Computational modeling
Concurrent computing
Electronics
Etching
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Predictive models
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shape
Solid modeling
Virtual manufacturing
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Summary:Etchant percolation through voids plays an important role in dissolution of radiation sensitive materials in IC manufacture, but analysis and simulation of this phenomenon are hampered by the complexity of carrying out simulations at up to 20000 voids etching simultaneously. An attempt is made to use a simplified material crack model and a formulation of the model in terms of cellular automata, which is well suited for massively parallel computation. Simulation is then used to characterize etch front propagation and the resulting resist profile shape. An analytic model predicting that the etch front velocity goes as a geometrical series in the product of crack density times the square of crack length shows agreement with the simulation results.< >
ISSN:0278-0070
1937-4151
DOI:10.1109/43.3946