New and accurate technique for determination of orientation of the straight edges of single‐crystal wafers

An x‐ray traverse topograph of the specimen wafer is recorded with diffracting planes nearly parallel to the straight edge. The scan is adjusted to have the image of the straight edge on one side. A projected image of the diffracting planes is also recorded on the same photographic film in the form...

Full description

Saved in:
Bibliographic Details
Published in:Review of scientific instruments 1988-08, Vol.59 (8), p.1409-1411
Main Authors: Lal, Krishan, Niranjana N. Goswami, S.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
X- and γ-ray instruments and techniques
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An x‐ray traverse topograph of the specimen wafer is recorded with diffracting planes nearly parallel to the straight edge. The scan is adjusted to have the image of the straight edge on one side. A projected image of the diffracting planes is also recorded on the same photographic film in the form of a stationary topograph (a sharp line) at a short distance from the traverse topograph. The angle between the image of the straight edge and the stationary topograph is measured directly. Accuracy of ±3 arcmin is achieved. A multicrystal x‐ray diffractometer or a standard x‐ray diffraction topography camera can be used. A few illustrative results obtained with silicon wafers are described.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1139678