New and accurate technique for determination of orientation of the straight edges of single‐crystal wafers

An x‐ray traverse topograph of the specimen wafer is recorded with diffracting planes nearly parallel to the straight edge. The scan is adjusted to have the image of the straight edge on one side. A projected image of the diffracting planes is also recorded on the same photographic film in the form...

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Published in:Review of scientific instruments 1988-08, Vol.59 (8), p.1409-1411
Main Authors: Lal, Krishan, Niranjana N. Goswami, S.
Format: Article
Language:English
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Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
X- and γ-ray instruments and techniques
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description An x‐ray traverse topograph of the specimen wafer is recorded with diffracting planes nearly parallel to the straight edge. The scan is adjusted to have the image of the straight edge on one side. A projected image of the diffracting planes is also recorded on the same photographic film in the form of a stationary topograph (a sharp line) at a short distance from the traverse topograph. The angle between the image of the straight edge and the stationary topograph is measured directly. Accuracy of ±3 arcmin is achieved. A multicrystal x‐ray diffractometer or a standard x‐ray diffraction topography camera can be used. A few illustrative results obtained with silicon wafers are described.
doi_str_mv 10.1063/1.1139678
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source American Institute of Physics; AIP_美国物理联合会期刊回溯（NSTL购买）
subjects Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
X- and γ-ray instruments and techniques
title New and accurate technique for determination of orientation of the straight edges of single‐crystal wafers
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