Realization of high mobility in inverted AlxGa1-xAs/GaAs heterojunctions

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Bibliographic Details
Published in:Applied physics letters 1988-06, Vol.52 (24), p.2037-2039
Main Authors: CHO, N. M, KIM, D. J, MADHUKAR, A, NEWMAN, P. G, SMITH, D. D, AUCOIN, T, IAFRATE, G. J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.99574