Amorphous Si/Si heterojunction microwave transistors

Because the emitter-base junctions of amorphous Si/Si heterojunction bipolar transistors (HBTs) with a conventional structure are inside the amorphous Si (a-Si) layer, their high-frequency performance is limited due to very low electron velocity in a-Si. An improved structure, the two-dimensional-el...

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Bibliographic Details
Published in:IEEE electron device letters 1989-01, Vol.10 (1), p.4-6
Main Authors: En-Jun Zhu, Zhang, S.S., Sheng, W.W., Zhao, B.Z., Xiong, C.K., Wang, Y.S.
Format: Article
Language:English
Subjects:
Amorphous materials
Applied sciences
Crystalline materials
Crystallization
Cutoff frequency
Electron emission
Electronics
Exact sciences and technology
Heterojunction bipolar transistors
III-V semiconductor materials
Microwave transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Temperature
Transistors
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Summary:Because the emitter-base junctions of amorphous Si/Si heterojunction bipolar transistors (HBTs) with a conventional structure are inside the amorphous Si (a-Si) layer, their high-frequency performance is limited due to very low electron velocity in a-Si. An improved structure, the two-dimensional-electron-gas (2DEG) emitter structure, is proposed to overcome these problems, and a-Si/Si HBTs with good high-frequency performance are fabricated. Their low-temperature fabrication technology can be extended to other III-V-compound HBTs.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.31663