Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

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Bibliographic Details
Published in:Semiconductor science and technology 1989-08, Vol.4 (8), p.663-676
Main Authors: Parker, S D, Williams, R L, Droopad, R, Stradling, R A, Barnham, K W J, Holmes, S N, Laverty, J, Phillips, C C, Skuras, E, Thomas, R, Zhang, X, Staton-Bevan, A, Pashley, D W
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/4/8/010