Carrier transport in semiconductor detectors of magnetic domains

Carrier transport in Hall-type devices detecting magnetic domains is analyzed in terms of a two-dimensional numerical model, using a finite element scheme. The numerical model allows the calculation of magnetic sensitivity for general device geometries or structures, any homogeneous semiconductor ma...

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Published in:IEEE transactions on electron devices 1987-10, Vol.34 (10), p.2077-2085
Main Authors: Nathan, A., Allegretto, W., Baltes, H.P., Sugiyama, Y.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Magnetic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_issue 10
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container_title IEEE transactions on electron devices
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creator Nathan, A.
Allegretto, W.
Baltes, H.P.
Sugiyama, Y.
description Carrier transport in Hall-type devices detecting magnetic domains is analyzed in terms of a two-dimensional numerical model, using a finite element scheme. The numerical model allows the calculation of magnetic sensitivity for general device geometries or structures, any homogeneous semiconductor material, and arbitrary domain shapes and sizes. We specifically consider three types of commonly used Hall detectors: the conventional Hall plate, the split-electrode Hall device, and the Hall cross. The magnetic sensitivity for these devices is computed for various domain configurations. In particular, the device's output response for moving domains is investigated and appropriate figures of merit are established with respect to spatial resolution. A comparison of the numerical solutions with previously reported experimental results supports the validity of our analysis.
doi_str_mv 10.1109/T-ED.1987.23201
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subjects Applied sciences
Electronics
Exact sciences and technology
Magnetic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Carrier transport in semiconductor detectors of magnetic domains
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