Uniform epitaxial growth of modulation-doped GaAs/Ga0.7Al0.3As on three-inch substrate by metalorganic chemical vapor deposition

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Bibliographic Details
Published in:Japanese journal of applied physics 1986, Vol.25 (2), p.238-241
Main Authors: OKAMOTO, A, TERAO, H, KAMEJIMA, T
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Online Access:Get full text
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ISSN:0021-4922
1347-4065