GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

A GaAs enhancement/depletion (E/D) MESFET 1-kbit static RAM has been fabricated on a 2-in GaAs-on-Si substrate. This is the most complex GaAs circuit reported to date for GaAs-on-Si material. The GaAs layer is grown on a (100) silicon wafer by MBE. Excellent threshold voltage uniformity has been obt...

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Bibliographic Details
Published in:IEEE electron device letters 1987-03, Vol.8 (3), p.121-123
Main Authors: Shichijo, H., Lee, J.W., McLevige, W.V., Taddiken, A.H.
Format: Article
Language:English
Subjects:
Annealing
Application specific integrated circuits
Applied sciences
Digital integrated circuits
Electronics
Exact sciences and technology
Gallium arsenide
Instruments
Laboratories
MESFETs
Random access memory
Silicon
Storage and reproduction of information
Surface morphology
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Summary:A GaAs enhancement/depletion (E/D) MESFET 1-kbit static RAM has been fabricated on a 2-in GaAs-on-Si substrate. This is the most complex GaAs circuit reported to date for GaAs-on-Si material. The GaAs layer is grown on a (100) silicon wafer by MBE. Excellent threshold voltage uniformity has been obtained for enhancement- and depletion-mode MESFET's. The row-address access time of the 1-kbit SRAM is 6-14 ns compared with 4-12 ns for bulk GaAs chips fabricated concurrently using the identical E/D MESFET process. The total power dissipation, of less than 500 mW, is also comparable to the bulk GaAs chips.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26573