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The influence of growth conditions on sulfur and selenium incorporation in Ga1-xAlxAs grown by molecular-beam epitaxy

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Bibliographic Details
Published in:	Journal of applied physics 1986-08, Vol.60 (3), p.1009-1014
Main Authors:	ANDREWS, D. A, HECKINGBOTTOM, R, DAVIES, G. J
Format:	Article
Language:	English
Subjects:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online Access:	Get full text
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