Modeling charge injection in MOS analog switches

Charge injection in MOS switches has been analyzed. The analysis has been extended to the general case of including source resistance and source capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. A small-g...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems 1987-02, Vol.34 (2), p.214-216
Main Authors: Bing Sheu, Je-Hurn Shieh, Patil, M.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Circuit properties
Cost function
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Impedance
Joining processes
Linear programming
MOS devices
Sampling methods
Switches
Switching circuits
Switching, multiplexing, switched capacity circuits
Voltage
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Summary:Charge injection in MOS switches has been analyzed. The analysis has been extended to the general case of including source resistance and source capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. A small-geometry switch, slow switching rate, and small source resistance can help reduce the charge injection effect.
ISSN:0098-4094
1558-1276
DOI:10.1109/TCS.1987.1086096