High threshold voltage reproducibility for WSi/AlxGa1-xAs/GaAs MIS-like heterostructure FET

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Bibliographic Details
Published in:Japanese journal of applied physics 1986-06, Vol.25 (6), p.928-929
Main Authors: MARUO, T, ARAI, K, YANAGAWA, F
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.25.928