A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation

Hybrid techniques for coupling Monte Carlo and drift-diffusion models for device simulation show excellent promise because of their computational efficiency. We present a rigorous technique for coupling the two models that retains the computational efficiency of the drift-diffusion scheme and the ri...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1987-02, Vol.34 (2), p.392-399
Main Authors: Bandyopadhyay, S., Klausmeier-Brown, M.E., Maziar, C.M., Datta, S., Lundstrom, M.S.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Hybrid techniques for coupling Monte Carlo and drift-diffusion models for device simulation show excellent promise because of their computational efficiency. We present a rigorous technique for coupling the two models that retains the computational efficiency of the drift-diffusion scheme and the rigor of a Monte Carlo treatment. From regional Monte Carlo simulation, the position'dependent mobility, diffusion coefficient, and the energy-gradient field are evaluated for specific regions of common device structures where transient hot-electron effects are important, These are used in a new technique to couple Monte Carlo and drift-diffusion models for computationally efficient global device simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.22935