H2-Enhanced epitaxial regrowth of polycrystalline silicon through natural oxide layers on silicon substrates

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Bibliographic Details
Published in:Japanese journal of applied physics 1985, Vol.24 (5), p.518-523
Main Authors: KUGIMIYA, K, HIROFUJI, Y
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Online Access:Get full text
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.24.518