Alloying of Al-Cu-Si metallization by rapid thermal annealing

Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10 -7 Ω.cm 2 ) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppre...

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Bibliographic Details
Published in:IEEE electron device letters 1986-02, Vol.7 (2), p.137-139
Main Authors: Alvi, N.S., Kwong, D.L.
Format: Article
Language:English
Subjects:
Alloying
Applied sciences
Contact resistance
Electric variables measurement
Electrical resistance measurement
Electromigration
Electronics
Exact sciences and technology
Metallization
Microelectronic fabrication (materials and surfaces technology)
Rapid thermal annealing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Surface resistance
Temperature distribution
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Summary:Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10 -7 Ω.cm 2 ) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26320