Loading…

Alloying of Al-Cu-Si metallization by rapid thermal annealing

Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10 -7 Ω.cm 2 ) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppre...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE electron device letters 1986-02, Vol.7 (2), p.137-139
Main Authors:	Alvi, N.S., Kwong, D.L.
Format:	Article
Language:	English
Subjects:	Alloying Applied sciences Contact resistance Electric variables measurement Electrical resistance measurement Electromigration Electronics Exact sciences and technology Metallization Microelectronic fabrication (materials and surfaces technology) Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Surface resistance Temperature distribution
Citations:	Items that cite this one
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

cited_by	cdi_FETCH-LOGICAL-c379t-83957f8e57b61a0cfb63cceffb6cc488c1d541185a62ca50992b1f131dc999e93
cites
container_end_page	139
container_issue	2
container_start_page	137
container_title	IEEE electron device letters
container_volume	7
creator	Alvi, N.S. Kwong, D.L.
description	Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10 -7 Ω.cm 2 ) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.
doi_str_mv	10.1109/EDL.1986.26320
format	article
fullrecord	<record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_8650928</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1486143</ieee_id><sourcerecordid>29349529</sourcerecordid><originalsourceid>FETCH-LOGICAL-c379t-83957f8e57b61a0cfb63cceffb6cc488c1d541185a62ca50992b1f131dc999e93</originalsourceid><addsrcrecordid>eNqNkL1PwzAQRy0EEqWwsrBkQGwJvpzt2ANDVcqHVIkBmC3HdcDITYqdDuWvJ6UIRphueb8n3SPkFGgBQNXl7HpegJKiKAWWdI-MgHOZUy5wn4xoxSBHoOKQHKX0RikwVrERuZqE0G18-5J1TTYJ-XSdP_ps6XoTgv8wve_arN5k0az8IutfXVyakJm2dSYMo2Ny0JiQ3Mn3HZPnm9nT9C6fP9zeTyfz3GKl-lyi4lUjHa9qAYbaphZorWuGay2T0sKCMwDJjSit4VSpsoYGEBZWKeUUjsnFzruK3fvapV4vfbIuBNO6bp10qZApXv4DlBVSMQT6G0TkiFtjsQNt7FKKrtGr6JcmbjRQve2uh-56211_dR8G599mk6wJTTSt9elnJcXw32Afk7Md5p1zv04mBTDET8p8iYc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28335339</pqid></control><display><type>article</type><title>Alloying of Al-Cu-Si metallization by rapid thermal annealing</title><source>IEEE Xplore (Online service)</source><creator>Alvi, N.S. ; Kwong, D.L.</creator><creatorcontrib>Alvi, N.S. ; Kwong, D.L.</creatorcontrib><description>Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10 -7 Ω.cm 2 ) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1986.26320</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Alloying ; Applied sciences ; Contact resistance ; Electric variables measurement ; Electrical resistance measurement ; Electromigration ; Electronics ; Exact sciences and technology ; Metallization ; Microelectronic fabrication (materials and surfaces technology) ; Rapid thermal annealing ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates ; Surface resistance ; Temperature distribution</subject><ispartof>IEEE electron device letters, 1986-02, Vol.7 (2), p.137-139</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-83957f8e57b61a0cfb63cceffb6cc488c1d541185a62ca50992b1f131dc999e93</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1486143$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8650928$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Alvi, N.S.</creatorcontrib><creatorcontrib>Kwong, D.L.</creatorcontrib><title>Alloying of Al-Cu-Si metallization by rapid thermal annealing</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10 -7 Ω.cm 2 ) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.</description><subject>Alloying</subject><subject>Applied sciences</subject><subject>Contact resistance</subject><subject>Electric variables measurement</subject><subject>Electrical resistance measurement</subject><subject>Electromigration</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Metallization</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Rapid thermal annealing</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><subject>Surface resistance</subject><subject>Temperature distribution</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNqNkL1PwzAQRy0EEqWwsrBkQGwJvpzt2ANDVcqHVIkBmC3HdcDITYqdDuWvJ6UIRphueb8n3SPkFGgBQNXl7HpegJKiKAWWdI-MgHOZUy5wn4xoxSBHoOKQHKX0RikwVrERuZqE0G18-5J1TTYJ-XSdP_ps6XoTgv8wve_arN5k0az8IutfXVyakJm2dSYMo2Ny0JiQ3Mn3HZPnm9nT9C6fP9zeTyfz3GKl-lyi4lUjHa9qAYbaphZorWuGay2T0sKCMwDJjSit4VSpsoYGEBZWKeUUjsnFzruK3fvapV4vfbIuBNO6bp10qZApXv4DlBVSMQT6G0TkiFtjsQNt7FKKrtGr6JcmbjRQve2uh-56211_dR8G599mk6wJTTSt9elnJcXw32Afk7Md5p1zv04mBTDET8p8iYc</recordid><startdate>19860201</startdate><enddate>19860201</enddate><creator>Alvi, N.S.</creator><creator>Kwong, D.L.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>19860201</creationdate><title>Alloying of Al-Cu-Si metallization by rapid thermal annealing</title><author>Alvi, N.S. ; Kwong, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-83957f8e57b61a0cfb63cceffb6cc488c1d541185a62ca50992b1f131dc999e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Alloying</topic><topic>Applied sciences</topic><topic>Contact resistance</topic><topic>Electric variables measurement</topic><topic>Electrical resistance measurement</topic><topic>Electromigration</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Metallization</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Rapid thermal annealing</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Substrates</topic><topic>Surface resistance</topic><topic>Temperature distribution</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alvi, N.S.</creatorcontrib><creatorcontrib>Kwong, D.L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alvi, N.S.</au><au>Kwong, D.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Alloying of Al-Cu-Si metallization by rapid thermal annealing</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1986-02-01</date><risdate>1986</risdate><volume>7</volume><issue>2</issue><spage>137</spage><epage>139</epage><pages>137-139</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10 -7 Ω.cm 2 ) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1986.26320</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0741-3106
ispartof	IEEE electron device letters, 1986-02, Vol.7 (2), p.137-139
issn	0741-3106 1558-0563
language	eng
recordid	cdi_pascalfrancis_primary_8650928
source	IEEE Xplore (Online service)
subjects	Alloying Applied sciences Contact resistance Electric variables measurement Electrical resistance measurement Electromigration Electronics Exact sciences and technology Metallization Microelectronic fabrication (materials and surfaces technology) Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Surface resistance Temperature distribution
title	Alloying of Al-Cu-Si metallization by rapid thermal annealing
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T10%3A21%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Alloying%20of%20Al-Cu-Si%20metallization%20by%20rapid%20thermal%20annealing&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Alvi,%20N.S.&rft.date=1986-02-01&rft.volume=7&rft.issue=2&rft.spage=137&rft.epage=139&rft.pages=137-139&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/EDL.1986.26320&rft_dat=%3Cproquest_pasca%3E29349529%3C/proquest_pasca%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c379t-83957f8e57b61a0cfb63cceffb6cc488c1d541185a62ca50992b1f131dc999e93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28335339&rft_id=info:pmid/&rft_ieee_id=1486143&rfr_iscdi=true