Performances prediction of an ultra broad-band voltage-controlled attenuator using Schottky contact coplanar line properties

The performance of Schottky contact coplanar lines used as voltage-variable attenuators is discussed and demonstrated with a first realization on F.E.T. epitaxy. It is shown that the use of lower doped epitaxies offers more interesting characteristics. Then, an attenuator is proposed, the theoretica...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 1986-02, Vol.7 (2), p.132-133
Main Authors: Seguinot, C., Kennis, P., Pribetich, P., Legier, J.F.
Format: Article
Language:English
Subjects:
Applied sciences
Attenuation
Attenuators
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Epitaxial growth
Exact sciences and technology
Frequency
Gallium arsenide
Geometry
Integrated circuit technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave propagation
Schottky barriers
Voltage
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The performance of Schottky contact coplanar lines used as voltage-variable attenuators is discussed and demonstrated with a first realization on F.E.T. epitaxy. It is shown that the use of lower doped epitaxies offers more interesting characteristics. Then, an attenuator is proposed, the theoretical performances of which are: broad-band capability, low loss for ON state, low S.W.R. This device can be operated over a wide band without important mismatch.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26318