Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium

A low temperature method of fabricating conductive (3.5 Ω/ sq.) p + /n junction diodes possessing excellent I-V characteristics with reverse-bias leakage less than -3 nA.cm -2 at -5 V is described. Single crystal n-type 〈100〉 Si is implanted with 60 keV 11 B + through 0.028-µm thick sputtered Ti fil...

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Bibliographic Details
Published in:IEEE electron device letters 1985-01, Vol.6 (11), p.591-593
Main Authors: Delfino, M., Broadbent, E.K., Morgan, A.E., Burrow, B.J., Norcott, M.H.
Format: Article
Language:English
Subjects:
Applied sciences
Boron
Diodes
Electronics
Etching
Exact sciences and technology
Rapid thermal annealing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicides
Silicon
Temperature
Thermal conductivity
Tin
Titanium
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Summary:A low temperature method of fabricating conductive (3.5 Ω/ sq.) p + /n junction diodes possessing excellent I-V characteristics with reverse-bias leakage less than -3 nA.cm -2 at -5 V is described. Single crystal n-type 〈100〉 Si is implanted with 60 keV 11 B + through 0.028-µm thick sputtered Ti film. Rapid thermal annealing (RTA) in an N 2 ambient simultaneously forms a 0.36-µm deep p + /n junction and a 0.063-µm thick bilayer of TiN and TiSi 2 with a resistivity of 22 µΩ.cm. The electrical properties of these diodes are not degraded by annealing for 30 min at 500°C, suggesting that the outer layer of TiN is an effective diffusion barrier between TiSi 2 and Al.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26241