Effective minority-carrier mobility in heavily doped silicon defined by trapping and energy-gap narrowing

A simple model for effective minority-carrier mobility in heavily doped silicon, lower than the extended-state (∼ majority-carrier) mobility, is developed based on the assumption that some of the carriers are trapped in band-tail (or shallow bound) states. The model demonstrates for the first time a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1985-09, Vol.32 (9), p.1874-1877
Main Authors: Fossum, J.G., Burk, D.E., Shuy-Young Yung
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:A simple model for effective minority-carrier mobility in heavily doped silicon, lower than the extended-state (∼ majority-carrier) mobility, is developed based on the assumption that some of the carriers are trapped in band-tail (or shallow bound) states. The model demonstrates for the first time a correlation between measured mobility and energy-gap narrowing, which is also influenced by band tails. Numerical simulations of temperature-dependent hole transport in the emitters of n + -p-n transistors, which accurately predict the measured (base) currents when the effective hole mobility model and the energy-gap narrowing it implies are used, are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22211