Electronic traps and Pb centers at the Si/SiO2 interface: band-gap energy distribution

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Bibliographic Details
Published in:Journal of applied physics 1984-01, Vol.56 (10), p.2844-2849
Main Authors: POINDEXTER, E. H, GERARDI, G. J, RUECKEL, M.-E, CAPLAN, P. J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.333819