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Epitaxial growth of lattice-matched CaxSr1-xF2 on (100) and (110) GaAs substrates
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Published in: | Journal of applied physics 1984-01, Vol.56 (6), p.1642-1646 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
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container_end_page | 1646 |
container_issue | 6 |
container_start_page | 1642 |
container_title | Journal of applied physics |
container_volume | 56 |
creator | SISKOS, S FONTAINE, C MUNOZ-YAGUE, A |
description | |
doi_str_mv | 10.1063/1.334151 |
format | article |
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fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 1984-01, Vol.56 (6), p.1642-1646 |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_pascalfrancis_primary_9084393 |
source | AIP_美国物理联合会期刊回溯(NSTL购买) |
subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
title | Epitaxial growth of lattice-matched CaxSr1-xF2 on (100) and (110) GaAs substrates |
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