Si MOSFET fabrication using focused ion beams

Submicrometer focused ion beams have been used both for the maskless ion implantation of p-channel depletion-mode Si MOSFET's and for the gate lithography of n-channel enhancement-mode Si MOSFET's. B-Pt and Au-Si liquid-metal-alloy ion sources were utilized in a single-lens focusing column...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1984-09, Vol.31 (9), p.1186-1189
Main Authors: Kubena, R.L., Lee, J.Y.-M., Jullens, R.A., Brault, R.G., Middleton, P.L., Stevens, E.H.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Submicrometer focused ion beams have been used both for the maskless ion implantation of p-channel depletion-mode Si MOSFET's and for the gate lithography of n-channel enhancement-mode Si MOSFET's. B-Pt and Au-Si liquid-metal-alloy ion sources were utilized in a single-lens focusing column for the implantation and lithography steps, respectively. An 800-Å-thick Al stopping layer was used at the target to separate the lighter ions from the heavier ion species in the beams. Reasonable dc electrical characteristics were measured for the chosen device process parameters.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21686