Refinements in the measurement of depleted generation lifetime

Constant capacitance measurement of bulk generation lifetime using MOS capacitors with a typical desktop computer controlled interface bus measurement system is shown to be practical for medium-and high-lifetime silicon. Refinements to the basic technique are developed to deal with surface generatio...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1983-10, Vol.30 (10), p.1274-1277
Main Authors: Eades, W.D., Shott, J.D., Swanson, R.M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Constant capacitance measurement of bulk generation lifetime using MOS capacitors with a typical desktop computer controlled interface bus measurement system is shown to be practical for medium-and high-lifetime silicon. Refinements to the basic technique are developed to deal with surface generation, diffusion from the neutral bulk, and generation in the lateral surface depletion region.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1983.21286