MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates

• Published in: Journal of physics. D, Applied physics Applied physics, 2001-05, Vol.34 (9), p.1293-1300
• Main Authors: Feng, P X, Riley, J D, Leckey, R C G, Ley, L
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/34/9/303

MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates is studied. Insight into the formation mechanism of this type of surface, the interface, and the bulk has been provided by photoemission spectroscopy. Detailed lineshape analyses of Se, Mg, and Zn core levels have been performed, following which their evolution as MgSe is deposited. Shifts for all core levels are very small during the deposition, indicating that band bending is virtually negligible under the present growth conditions. After deposition of 1.7 nm of MgSe, emission from the substrate is fully attenuated. A value of 0.44 nm is obtained for the inelastic scattering mean free path for electrons with a kinetic energy of around 65.8 eV in the MgSe thin films. Annealing the sample at 500 C for 30 min results in full desorption of the thick Se layer formed on the MgSe surface. The intensities of the MgSe core level emissions decrease. By contrast, the ZnSe peak reappears. Emission from metallic Mg is also observed. Annealing at 500 C for 30 min more results in the desorption of nearly all the MgSe layer, whereas the intensity of the bulk ZnSe emission remains almost unchanged. (Author)