Spectral optoelectronic features of Cu-containing arsenic sulfide (As^sub 2^S^sub 3^)^sub 0.95^Cu^sub 0.05

• Published in: Journal of materials science. Materials in electronics 2012-06, Vol.23 (6), p.1151
• Main Authors: Badr, A M, Ramadan, S M, Thorrya, M M
• Format: Article
• Language: English
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-011-0563-y

Chalcogenide amorphous thin films of the modification (As^sub 2^S^sub 3^)^sub 0.95^Cu^sub 0.05^ were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6-2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.[PUBLICATION ABSTRACT]