InGaAs-InP mesa DHBTs with simultaneously high f[tau] and fmax and low Ccb/Ic ratio

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Bibliographic Details
Published in:IEEE electron device letters 2004-05, Vol.25 (5), p.250
Main Authors: Griffith, Z, Dahlstrom, M, Urteaga, M, Rodwell, M.J.W, Fang, X.-M, Lubyshev, D, Wu, Y, Fastenau, J.M, Liu, W.K
Format: Article
Language:English
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.827288