A 0.15-[micro]m 60-GHz high-power composite channel GaInAs/InP HEMT with low gate current

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Bibliographic Details
Published in:IEEE electron device letters 2001-06, Vol.22 (6), p.257
Main Authors: Boudrissa, M, Delos, E, Wallaert, X, Theron, D, De Jaeger, J.C
Format: Article
Language:English
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.924834