InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax

InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure.

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2005-01, Vol.26 (1), p.11
Main Authors: Griffith, Z, Dahlstrom, M, Rodwell, M.J.W, Fang, X.-M, Lubyshev, D, Wu, Y, Fastenau, J.M, Liu, W.K
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.840715(410)26